jiang su changjiang electronics technology co . , ltd to - 92 plastic - encapsulate transistors s901 1 transistor ? n p n ? feature power dissipation p cm : 0.31 w ? t amb=25 ??? collector current i cm: 0.03 a c ollector - base voltage v ( br ) cbo : 30 v oper ating and storage junction temperature range tj, t stg : - 55 ?? to +150 ?? electrical characteristics ? t amb =25 ?? unless otherwise specified ? p arameter symbol test conditions min typ max unit collector - base breakdown voltage v(br) cbo i c = 100 | a ? i e =0 30 v c ollector - emitter breakdown voltage v(br) ceo i c = 0.1 ma , i b =0 20 v emitter - base breakdown voltage v(br) e b o i e = 100 | a ? i c =0 4 v collector cut - off current i cbo v cb = 16 v , i e =0 0.1 | a collector cut - off current i cbo v cb = 16 v , i e =0 0. 1 | a emitter cut - off current i eb o v e b = 3 .5v, i c =0 0.1 | a dc current gain h fe (1) v ce = 5v , i c = 1m a 28 270 collector - emitter saturation voltage v ce(sat) i c = 10 ma , i b = 1m a 0.3 v b ase - emitter voltage v be(sat) i c = 10 ma , i b = 1m a 1 v transition frequency f t v ce =5v,i c =1ma, f=30mhz 150 mhz classification of h fe(1) rank d e f g h i j range 28 - 45 39 - 60 54 - 80 72 - 108 97 - 146 132 - 198 180 - 270 1 2 3 to ?a 92 1.emitter 2. collector 3 . base
d b e a a1 c l d1 e e1 t o-92 p ackage outline dimensions symbol a a1 b c d d1 e e e1 l ? min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 2.440 14.100 0.000 max 3.700 1.400 0.550 0.510 4.700 4.700 2.640 14.500 1.600 0.380 min 0.130 0.043 0.015 0.014 0.173 0.135 0.169 0.096 0.555 0.000 max 0.146 0.055 0.022 0.020 0.185 0.185 0.104 0.571 0.063 0.015 dimensions in millimeters dimensions in inches 0.050typ 1.270typ |?
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